A COMPLETE STUDY OF PARAMETRIC DEPENDENCE EFFICIENCY OF FIN-FIELD EFFECT TRANSISTOR (FINFET) DEVICE

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Published: 2015-01-21

Page: 1-7


FIRDOUS AHMAD *

Department of Electronics & Instrumentation Technology, University of Kashmir, Srinagar- 190006, India

G. MOHIUD DIN BHAT

Department of Electronics & Instrumentation Technology, University of Kashmir, Srinagar- 190006, India

NISAR AHMAD WANI

Department of Electronics & Instrumentation Technology, University of Kashmir, Srinagar- 190006, India

*Author to whom correspondence should be addressed.


Abstract

In the present communication, we have investigated the characteristic of n-channel fin field-effect transistor (n-FinFET) at various temperature dependences. The temperature dependence of (I On/I Off) current ratio shows that thermal generation in the channel is the prime source of leakage mechanism existing in the current device. Moreover, the temperature dependence of Threshold voltage (VT) decreases sharply as compared to higher temperatures of the device. Drain Induced Barrier lowering (DIBL) almost varies linearly with temperature. The purpose of our paper is to study the variation of parameters of FinFET at various temperature effects. In the present study the device performance of FinFET of various parameters like (I On/I Off) current ratio, Threshold voltage Vth (V), Drain induced barrier lowering DIBL (mV/V), Sub-threshold Swing SS (mV/dec) and Trans-conductance Gm (S/um) with temperature effects (100K-400K), have been carried out using PADRE simulator from MuGFET’s. The simulation tool is based on drift-diffusion theory.

Keywords: FinFET, temperature, I on/I off current, threshold voltage, sub-threshold slope, DIBL, transconductance


How to Cite

AHMAD, F., BHAT, G. M. D., & WANI, N. A. (2015). A COMPLETE STUDY OF PARAMETRIC DEPENDENCE EFFICIENCY OF FIN-FIELD EFFECT TRANSISTOR (FINFET) DEVICE. Asian Journal of Mathematics and Computer Research, 1(1), 1–7. Retrieved from https://ikprress.org/index.php/AJOMCOR/article/view/15

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