SEVERAL SPUTTERING PARAMETERS AFFECTING THIN FILM DEPOSITION
HAROON EJAZ *
Department of Chemistry, Faculty of Basic Sciences, Lahore Garrison University, Lahore, Pakistan.
SHABBIR HUSSAIN
Department of Chemistry, Faculty of Basic Sciences, Lahore Garrison University, Lahore, Pakistan.
MANZAR ZAHRA
Department of Chemistry, Faculty of Basic Sciences, Lahore Garrison University, Lahore, Pakistan.
QAISAR MEHMOOD SAHARAN
Department of Chemistry, Faculty of Basic Sciences, Lahore Garrison University, Lahore, Pakistan.
SALMAN ASHIQ
Department of Chemistry, Faculty of Basic Sciences, Lahore Garrison University, Lahore, Pakistan.
*Author to whom correspondence should be addressed.
Abstract
Sputtering is a technique used for thin film deposition on different substrates for centuries. In this technique, the source atoms or electrons are bombarded on the target material that sputters target metal atoms. The emitted target atoms are deposited on the substrate in the form of thin films. Several sputtering parameters control the rate at which films are deposited. These sputtering parameters include voltage applied, sputter yield, type of the gas used, type of the target material used, type of the substrate on which the thin films are to be deposited, the working pressure of the system, power, temperature of the system and substrate, angle of incidence of bombardment and distance between target and substrate. These parameters are essential to have thin films of desired thickness and properties. These properties include electrical properties, thermal properties, optical properties and chemical properties as well.
Keywords: Sputtering, deposition rate, sputter yield, sputtering power, working pressure, sputtering temperature