EFFECT OF EXPOSURE OF LIGHT ON DENSITY OF DEFECT STATE IN Se96Bi4 GLASSY ALLOYS

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Published: 2015-06-22

Page: 1-7


SARISH YADAV *

Bharat Institute of Technology, Meerut, India.

KRISHNA. Ji

Bharat Institute of Technology, Meerut, India and Sunrise Institute of Engineering Technology & Management, Kanpur, India.

S. K. SHARMA

Harcourt Butler Technological Institute, Kanpur, India.

R. K. SHUKLA

Harcourt Butler Technological Institute, Kanpur, India.

A. KUMAR

Harcourt Butler Technological Institute, Kanpur, India.

*Author to whom correspondence should be addressed.


Abstract

Amorphous thin films of Se96Bi4 glassy alloy are prepared by vacuum evaporation technique. Space charge limited currents are measured at various fixed temperatures before and after exposure to white light of intensity 990 lux in a vacuum of 10-2 Torr. Using the theory of space charge limited conduction (SCLC), the density of localized states (DOS) has been calculated after each exposure of light (exposure time 1 -5 hours). The results indicate that DOS increases with the time of light exposure indicating the creation of light induced defects due to exposure of light.`

Keywords: Chalcogenide glasses, amorphous semiconductors, Light induced defect


How to Cite

YADAV, S., Ji, K., SHARMA, S. K., SHUKLA, R. K., & KUMAR, A. (2015). EFFECT OF EXPOSURE OF LIGHT ON DENSITY OF DEFECT STATE IN Se96Bi4 GLASSY ALLOYS. Journal of Applied Physical Science International, 4(1), 1–7. Retrieved from https://ikprress.org/index.php/JAPSI/article/view/2964

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