BANDGAP-TUNABLE PROPERTIES OF TERNARY ALLOYED ZnxCd1-xS NANOBELTS

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Published: 2017-12-26

Page: 96-99


LIWEI SUN *

Department of Physics, Jiangsu University of Science and Technology, Zhenjiang 212003, China

SHUPENG YE

Department of Physics, Jiangsu University of Science and Technology, Zhenjiang 212003, China

*Author to whom correspondence should be addressed.


Abstract

Bandgap-tunable semiconductor materials have wide application in optoelectronic devices. In this paper, we prepared high-quality compositionally tunable ternary alloyed ZnxCd1-xS semiconductor nanobelts by vapor transport method at high temperture with the reaction of a mixture ZnS and CdS micropowers as the precursors. The band gap of the ZnxCd1-xS nanobelts can be tuned from 2.4 to 3.6 eV by adjusting the composition ratio x in the vapor-phase-transport growth process. The morphology and structure of alloyed ZnxCd1-xS nanobelts was observed by transmission electron microscopy (TEM), field-emission scanning electron microscopy(FESEM), energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD). With the increasing of the Zn/Cd molar ratio, their photoluminescence (PL) spectra (bandgap) present clear blue-shift from 513 nm (2.4 eV) to 340 nm (3.6 eV). The results on the mechanism of the tunable bandgap properties will build a strong foundation for future application of ZnxCd1-xS materials.

Keywords: Bandgap-tunable, optical properties, PL


How to Cite

SUN, L., & YE, S. (2017). BANDGAP-TUNABLE PROPERTIES OF TERNARY ALLOYED ZnxCd1-xS NANOBELTS. Journal of Applied Physical Science International, 9(3), 96–99. Retrieved from https://ikprress.org/index.php/JAPSI/article/view/3008

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